| 摘要 |
In each memory cell of a static RAM, the cross coupling of a flip-flop circuit is made by part of the gate electrodes (7C, 7D) of MISFETs (Q1, Q2) constituting the flip-flop circuit. Load resistors (R1, R2) for each side of the flip-flop circuit are formed from a polysilicon layer and each lies above the MISFET (Q2, Q1) of the other side of the circuit. The resistance elements (R1, R2) act as transistors with their resistance values changing in accordance with the switching state of the flip-flops MISFETS (Q2, Q1) to stabilise the state of the circuit. <IMAGE> |
