| 摘要 |
PURPOSE:To obtain an ion beam exposing mask to be easily formed by forming a substrate of titanium or titanium alloy and forming a nitride film in a figure state on the substrate. CONSTITUTION:A substrate 1 is formed of titanium or titanium alloy, and a nitride film 2 is formed in a figure state on the substrate 1. The TiN film 2 is formed by exposing the surface of a Ti plate 1 of approx. 1mm thick at high temperature with NH3 atmosphere to form a TiN film at 500-1000Angstrom , and forming a figure state by a normal photoetching method. When the substrate 1 and the ion beam exposure mask by the nitride film pattern 2 are used in this manner, the mask can be easily formed, and the mask itself can be used as an H<+> ion beam source. |
