发明名称 |
Method of forming electrodes aligned with respect to a level of implantation in a substrate and a method of forming a charge transfer filter |
摘要 |
The invention provides a method of forming electrodes aligned with respect to an implantation level in a substrate, including the following main phases: formation of a dielectric layer on a substrate; formation of semiconducting or conducting elements which are to serve as mask for implantation; implantation; formation of a layer of conducting or semiconducting material; cutting out electrodes from said layer and from the semiconducting or conducting elements.
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申请公布号 |
US4753900(A) |
申请公布日期 |
1988.06.28 |
申请号 |
US19860942672 |
申请日期 |
1986.12.17 |
申请人 |
THOMSON-CSF |
发明人 |
BLANCHARD, PIERRE;BEAL, GERARD |
分类号 |
H01L21/339;H01L29/76;H01L29/762;H01L29/772;H03H15/02;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/339 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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