发明名称 Method of forming electrodes aligned with respect to a level of implantation in a substrate and a method of forming a charge transfer filter
摘要 The invention provides a method of forming electrodes aligned with respect to an implantation level in a substrate, including the following main phases: formation of a dielectric layer on a substrate; formation of semiconducting or conducting elements which are to serve as mask for implantation; implantation; formation of a layer of conducting or semiconducting material; cutting out electrodes from said layer and from the semiconducting or conducting elements.
申请公布号 US4753900(A) 申请公布日期 1988.06.28
申请号 US19860942672 申请日期 1986.12.17
申请人 THOMSON-CSF 发明人 BLANCHARD, PIERRE;BEAL, GERARD
分类号 H01L21/339;H01L29/76;H01L29/762;H01L29/772;H03H15/02;(IPC1-7):H01L21/28 主分类号 H01L21/339
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