发明名称 MOSAIC TARGET FOR MAGNETRON SPUTTERING
摘要 PURPOSE:To provide a target which decreases the change in the components and thickness of resulted thin films by providing materials having the electric resistance larger than the highest value among the electric resistance values of respective sputtering members between the sputtering members of high sputtering speeds and cathode electrode and uniformizing the surfaces of the respective sputtering members to the same height. CONSTITUTION:The sputtering members 5a, 5b... formed of different metals are disposed at the narrow intervals at which the electric discharge with each other does not arise on the cathode electrode 1 disposed with a magnet 4 behind the same. Layers 7 consisting of the material having the electric resistance larger than the highest value among the electric resistance values of the members 5a, 5b... are provided between the sputtering members of the high sputtering speeds and the electrode 1 and the height thereof is uniformized to the same height as the other sputtering members. The approximately uniform consumption of the sputtering members of the different sputtering speeds is thereby permitted. The dispersion in the thin film components which are liable to be nonuniformized with lapse of the sputtering time is, therefore, eliminated and the film thicknesses are uniformized.
申请公布号 JPS63183170(A) 申请公布日期 1988.07.28
申请号 JP19870015204 申请日期 1987.01.27
申请人 SHINKU ZAIRYO KK 发明人 MIZOGUCHI SHIGEO;YOSHINAGA YASUNOBU;ABE KAZUO
分类号 C23C14/34 主分类号 C23C14/34
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