| 摘要 |
PURPOSE:To prevent the decrease of emitter saturation current and base current, make the resistance of a drawing-out lead small, and obtain a uniform and large current amplification factor, by a method wherein a diffusion layer and its electrode are formed at a time, by diffusing impurity mixed previously in a metal into a silicon substrate as the metal is made silicide. CONSTITUTION:An insulating film 14 having an aperture is formed on a silicon layer 13 in which a first conductivity type impurity is introduced. A metal film 15, in which a second conductivity type impurity is mixed, is formed. By heat treatment, the metal film 15 is made silicide, and, along with that, impurity is diffused from the metal film 15 into the above-mentioned silicon layer 18 to form a silicon layer 17 into which a second conductivity type impurity is introduced. For example, an N<+>-Si layer 11 and an N-Si layer 12 are formed on an Si substrate 10, and a P-Si layer 18 is formed by implanting boron ions into the surface of the P-Si layer 12. An oxide film 14 is formed, and a contact hole 14a is made in the oxide film 14. After a W film 15 is formed, As ions are implanted..By heat treatment, a WSi2 film 16 is formed only on Si, and at the same time, an N-Si layer 17 is formed.
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