发明名称 RANDOM ACCESS MEMORY ELEMENT EQUIPPED WITH EPROM
摘要 <p>PURPOSE:To shorten a write time by transferring the stored contents in an EPROM block to a RAM block at the leading time of a power source and actuating as a RAM after the leading time of the power source. CONSTITUTION:A supply power source leading detection circuit 3 detects that the supply power source voltage of a memory element becomes more than a fixed value and the memory element becomes in an action-enabled state and outputs a power source leading detection signal 17. Receiving the power source leading detection signal 17, a data transfer control circuit 4 transfers the stored data in the EPROM block 1 to the RAM block 2 in the case of the leading of the power source. Since the data written in the EPROM block 1 is transferred to the RAM block 2 after the leading of the power source so as to be read out to outside, a titled element has the function working as a nonvolatile memory.</p>
申请公布号 JPS63197096(A) 申请公布日期 1988.08.15
申请号 JP19870030170 申请日期 1987.02.10
申请人 NEC CORP 发明人 SENOO TOSHIRO
分类号 G11C14/00;G11C11/34 主分类号 G11C14/00
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