Monolithic integration of silicon and gallium arsenide devices,申请号US19860874295-传众专利搜索

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发明名称	Monolithic integration of silicon and gallium arsenide devices
摘要
申请公布号	US4774205(A)	申请公布日期	1988.09.27
申请号	US19860874295	申请日期	1986.06.13
申请人	MASSACHUSETTS INSTITUTE OF TECHNOLOGY	发明人	CHOI, HONG K.;TSAUR, BOR-YEU;TURNER, GEORGE W.
分类号	H01L21/20;H01L21/8234;H01L21/8258;H01L27/00;H01L27/06;H01L27/088;H01L27/095;H01L27/15;H01L33/00;(IPC1-7):H01L21/20;H01L21/324	主分类号	H01L21/20
代理机构		代理人
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