| 摘要 |
PURPOSE:To obtain an oscillation wavelength in an ultraviolet range by employing a material with a lattice constant smaller than the lattice constant of GaAs as a substrate material. CONSTITUTION:A substrate crystal which has a lattice constant smaller than that of GaAs and larger than that of ZnS and whose lattice can be matched with the lattice of a semiconductor layer built up on it is employed as a substrate 11, ZnSxSeyTe1-x-y (0<x+y<=1) layers are employed as cladding layers 12 and 14 and a ZnSx' Sey'Te1-x'-y' (0<x'+y'<1) layer is employed as an active layer 13. With this constitution, as the forbidden band width of ZnSSeTe can be widened compared with that in the case of employing GaAs as the substrate material, a semiconductor laser which has an oscillation wavelength in an ultraviolet range can be realized and the performances of information equipment and consumer equipment such as optical disc players and laser beam printers can be substantially improved. |
