Method for producing a laser diode having a buried active layer and lateral current limiting, and a laser diode having a buried active layer and lateral current limiting

摘要

Laser diodes which are produced in only one epitaxial step have a longer life than those which are produced in a plurality of epitaxial steps with intermediate etching steps. Since the double heterostructure for laser diodes having a buried active layer is produced in only one epitaxial step, such that the active layer (33) grows in an interrupted manner by influencing the growth parameters, lateral layers (332) of the same material are produced on the side of the stripe (331) of the active layer (33), and the current must therefore be limited to the region of the stripe (331) of the active layer (33). This lateral current limiting is implemented by means of lateral channels (3322) between the buffer layer (32) and the semiconductor layer (34) on the side of the stripe (331) of the active layer (33). The lateral channels (3322) are produced by partially etching away the lateral layers (332) of the active layer (33), using an acid which attacks only the active layer (33) and leaves the buffer layer (32) and the semiconductor layer (34) undamaged, via transverse channels (341) running at right angles to the layer structure. <IMAGE>