| 摘要 |
PURPOSE:To produce a device having a strong resistance to the parasitic bi-polar phenomenon by forming on a p-type Si substrate an n-type region into which P and As or P and Sb have been introduced, depositing a p-type epitaxial layer on the substrate, and thermally diffusing P and As or P and Sb from the n-type region into the p-type epitaxial layer. CONSTITUTION:Introduced into a p-type substrate 1 are, for instance, P and As, thereby to form an n-type region 2, and thereon a p-type epitaxial layer 3 is deposited. And by diffusing P and As from the region 2 into the layer 3, an n-type diffused well 4 is formed. Thus, a well can be formed at the substrate 1 surface side, and since As which has been introduced simultaneously with P has a small diffusion constant as compared with P, it does not largely move and can be made to stay at the interface of the substrate 1 and the layer 3. Therefore, an n-type diffusion well is formed which has a high-concentration impurity region 5 at the interface of the substrate 1 and the layer 3 and has such an impurity distribution as having a low impurity density at the surface.
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