| 摘要 |
PURPOSE:To prevent the short circuit between the bonding wire and the underlying semiconductor substrate by leaving the gate electrode material below the position where the terminal connection is to be performed, and depositing a conductive thin film on the gate electrode material of that part through an insulating film. CONSTITUTION:On a silicon substrate 1, by a selective oxidation method, a selective oxide film 2 is formed in the field region, and a gate electrode oxide film 3 in the active region. Then, after depositing polycrystalline silicon which is a gate electrode material on the whole surface, a photoetching method is used to leave a gate electrode part 4 and a part 11 positioned below the external connection electrode to be provided later. Then, after depositing an oxide film 5 on the whole surface, a contact hole 6 is formed above the gate electrode. Further, an Al film 7 is deposited on the whole surface and worked so as to leave an inter-connecting part 8 between the gate electrodes and an external connection electrode part 9, and then, after depositing passivation film 10 on the whole surface, only the part covering the part 9 is removed, thereby exposing the part 9.
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