| 摘要 |
PURPOSE:To prevent soft errors due to alpha particles, by inhibiting a depletion layer from being extended at a p-n junction only in a gate transistor and a memory cell connected to a bit line near a circuit for determining stored contents. CONSTITUTION:Since a content of a memory cell 2 is 'H', a potential of a node 4b near the memory cell 2 rises at a time t0. The potential then falls abruptly at a time t1 because electrons created by incident alpha particles are collected by the node 4b. However, since this node 4b is located away from a sense amplifier circuit 1, it takes considerable time that a node 4a catches such change in potential. Accordingly, an abrupt change in potential due to alpha particles will be recovered before the change in potential at the node 4b reaches the node 4a, that is, it is recovered at a time t2 before a time t3 at which the potential is read out by the sense amplifier circuit 1. Accordingly, no soft errors occurs in this storage device.
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