| 摘要 |
<p>PURPOSE:To obtain a fuse circuit of semiconductor having a small size and high reliability by associating a diode of a semiconductor substrate and a fuse of a polycrystalline silicon layer. CONSTITUTION:A fuse circuit 1 is composed of a silicon oxide film 3 formed on a p-type semiconductor substrate 2, an n-type diffused layer D1 surrounded by the film 3, a polycrystalline silicon layer F covering part of the layer, a silicon oxide film 4 covering a whole surface, and aluminum wirings formed in its opening. Part of the layer F constructs each fuse fi. To melt a fuse f1 connected in parallel with a resistor r1, a potential in which the substrate 2 and the layer D1 become forward is applied between the substrate 2 and a pad P1, and a fuse melting current flows. A fuse circuit 1a has a groove 6 selectively formed on the film 3 formed to cover the substrate 2, a polycrystalline silicon layer Fa covering the whole surface and part of the film 3, an n-type diffused layer D1a formed in contact with the polycrystalline silicon layer in the bottom of the groove 6 on the substrate 2, a silicon oxide film 4a covering polycrystalline silicon layers Fa, Fb, and aluminum wirings 5.</p> |
