| 摘要 |
PURPOSE:To prevent the generation of a hillock, etc., and to form film thickness having excellent uniform crystallizability by bringing the face azimuth of an InP substrate to a face azimuth inclined at 0.2-0.5 deg. from a (100) face and forming multilayer structure. CONSTITUTION:An InP substrate 1 inclined at 0.2-0.5 deg. from a face azimuth (100) is used, an InP buffer layer 2, an InxGa1-xAs (x=0.53) light absorbing layer 3 and an InP window layer 4 are shaped onto the substrate 1, and a p<+> region 5 is formed through a diffusion method. Consequently, since the multilayer structure of InxGa1-xAsyP1-y (0<=x<=1, 0<=y<=1) layers is laminated onto the substrate having a face azimuth tilted at 0.2-0.5 deg. from (100), and the surface atoms have some randomness because the face azimuth of the surface of the substrate is inclined slightly. Accordingly, the generation of a hillock, etc., is inhibited, crystallizability is not deteriorated by suppressing the inclination within 0.2-0.5 deg., and crystal growth having uniform layer thickness is enabled. |
