| 摘要 |
PURPOSE:To enable a wide contact width and narrowly and precisely prescribed embedded part to be constituted by accurately prescribing the groove or recess around active area with mask matching and by selectively performing etching elimination of remaining active outer layer after forming a wider mesa. CONSTITUTION:A SiO2 mask 6 is accurately patterned on an active area 3. Then, use of ammonium fluoride and hydrochloric acid when performing etching elimination of SiO2 mask 6 and p-InP protection layer 4, respectively, allows only the aimed layer to be etched and etching to be stopped accurately by an active layer 3b. Then, only the outer active layer 3b is selectively eliminated in a solution consisting of nitric acid (4), hydrogen peroxide (1), and water (1) and the advance of etching in horizontal direction is automatically stopped at the InP embedding part 7. It allows the width of active area 3a to be accurately prescribed and the position of active area within semiconductor luminous element to be accurately prescribed. |
