PROCEDEU DE MICROALIERE SUPERFICIALA

摘要

The process comprises laser deposition of refractory metal, for use in semiconductors. A stoichiometric mixt. of powdered aluminium and the metal (e.g. molybdenum) oxide, on deposition, gives alumino-thermic reaction. The continuous wave laser radiation initiates and controls the reaction, with heat evolution converting the intermediate layer to metallic silicide, and consequent energy and material savings.