| 摘要 |
PURPOSE:To monitor one side of light emitted from both terminal planes and to make APC control possible, by forming a stripe groove in the direction parallel to light emission terminal planes on both sides so that a central part of an active layer is bisected. CONSTITUTION:An N-InP substrate 1, an InGaAsP active layer 2, a P-InP clad layer 3, an N-InP or InGaAsP block layer 4, and a P<+>-InGaAsP contact layer 5 are laminated serially. Next P and N electrodes 6, 7 are formed and a stripe groove 8 is formed in the direction parallel to both light emission terminal planes of a chip so that a central part of the active layer 2 is bisected. An injection current is made to flow in crystal on both sides of light emission terminal planes in order to form a local inner narrow part and so a local stripe groove 9 is formed in stripe width 10 perpendicularly to these light emission terminal planes. When a forward voltage is biased on this composed terminal lightemitting diode, a current injected from the P electrode 6 flows only in the vicinity of both the light emission terminal planes because of its local inner narrow structure and next recombined in the active layer 2, so that this device functions to emit light from both the emission terminal planes. |
