| 摘要 |
PURPOSE:To produce diamond of a large area, which is useful for optical purposes, and as an electronic material, by introducing microwaves into the base from plural directions, as a specific gas mix is fed to the base. CONSTITUTION:A carbon source gas such as methane and a hydrogen gas are mixed so that the content of the carbon source gas is 0.1vol.% or higher, and the mixed gas is fed through gas feeder 5, control valve 8 into the reaction chamber 4. Then, microwaves (1,000MHz-100GHz frequency) is introduced from the oscillator 1, branching duct 2, waveguide 3 to the mixed gas in the reaction chamber 4 to form plasma. The activated mixed gas is then brought into contact with the base 7 which has Si surface kept at 400-200 deg.C to effect reaction under a pressure of 0.001-1,000Torr. Then, diamond is formed on the surface of the base 7 in a thin film. |
