INSULATING SUBSTRATE FOR THIN-FILM TRANSISTOR,申请号JP19870220789-传众专利搜索

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发明名称	INSULATING SUBSTRATE FOR THIN-FILM TRANSISTOR
摘要
申请公布号	JPS6464253(A)	申请公布日期	1989.03.10
申请号	JP19870220789	申请日期	1987.09.03
申请人	RICOH CO LTD;RICOH RES INST OF GEN ELECTRON	发明人	INAGI SHUNICHI;ISHIDA MAMORU;AKIYAMA ZENICHI;KOBATA MITSUHIRO
分类号	H01L21/84;H01L27/12;H01L29/02	主分类号	H01L21/84
代理机构		代理人
主权项
地址

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