发明名称 THIN FILM TRANSISTOR PANEL
摘要 <p>PURPOSE:To constitute the titled panel so that the capacity of an image signal accumulating capacitor can be enlarged, and the floating capacity between a gate and a ground can be made small by covering a gate electrode formed on a transparent electrode of the image signal accumulating capacitor in the vicinity of the gate electrode on this transparent insulating film. CONSTITUTION:A transparent insulating film 23 is formed so as to cover a gate electrode 22 formed on a transparent insulating substrate 21, and on this transparent insulating film 23, a transparent conductive film 24 of an image signal accumulating capacitor is formed in the vicinity of the gate electrode 22. In such a way, by widening an area of the transparent conductive film 24, the capacity of the capacitor can be enlarged, and also, a change of a short circuit of the gate electrode 22 and the electrode of the image signal accumulating capacitor is also decreased. Moreover, since the electrode of the image signal accumulating capacitor is formed by decreasing an overlap part in a position excluding the upper part of the gate electrode 22, the floating capacity between a gate and a ground becomes small.</p>
申请公布号 JPS6476037(A) 申请公布日期 1989.03.22
申请号 JP19870233368 申请日期 1987.09.17
申请人 CASIO COMPUT CO LTD 发明人 SATO SHUNICHI
分类号 H01L29/78;G02F1/136;G02F1/1362;G02F1/1368;H01L21/312;H01L21/314;H01L21/336;H01L27/12;H01L29/786 主分类号 H01L29/78
代理机构 代理人
主权项
地址