| 摘要 |
PURPOSE:To highly maintain the preservable stability of recording and to enable the execution of high-speed erasing simultaneously by incorporating respectively specific ratios of a Te element, Si element and Sn element into the title material. CONSTITUTION:The Si element is added at 15atom.% as an upper limit with respect to >=75atom.% Te element which is the essential component of the recording film into the recording film. Sn is simultaneously incorporated therein at 10atom.% as the upper limit. The crystallization temp. is, therefore, increased and the phase change from the amorphous state to the crystalline state is simultaneously and rapidly executed. The recording film material which is not only extremely improved in the preservable stability of recording but is also extremely reducible in erasing time is thereby obtd. The material which is widely applicable to computers and recorders for image filing is thus obtd. |
