| 摘要 |
PURPOSE:To make a covered part only a superconductor, or conversely an insulator by covering a part of a thin-film with a protective thin-film composed of materials that resist or shut off water, oxygen, or processing chemicals, and by introducing oxygen to a part of superconducting thin-film not covered or removing some constituent oxygen from this part. CONSTITUTION:A mixed-oxide film 12 of Y-Ba-Cu-O (TBa2Cu3O6.2) is stuck by a high-frequency sputtering method on a substrate 11 composed of a single crystal of such as sapphire, MgO, or SrTiO3 (or, a circuit of semiconductor memory, etc., or a layer like a resistance layer provided on it). Then, silicon nitride 13 is applied to it by the plasma CVD method, and a pattern is formed by dry etching using, for example, CF4+O2. Next, by heating this pattern-formed mixed-oxide for 2 hours for example, at 900 deg.C in air, then cooling it down to a room temperature by taking 6 hours and introducing oxygen to the mixed- oxide film. The part covered with silicon nitride film 13 becomes an insulator, and the part not covered becomes a supercondutor (YBa2Cu3O6.9). |
