MANUFACTURE OF MASK FOR RADIATION LITHOGRAPHY

摘要

PURPOSE: To make it possible to reproducibly adjust residual stresses by forming a specific absorptive material layer consisting of partially oxidized tungsten on a substrate. CONSTITUTION: A mask base and the substrate are used. The surface of the substrate is provided with the absorptive material layer composed according to desired mask patterns. This layer is the absorptive material layer of an oxygen content of 21 to 29atm.% consisting of the partially oxidized tungsten. The thickness thereof is selectable according to the lithography radiation to be used. As a result, the absorptive material layer having the mask structure exhibiting only the min. residual stresses in the limited regions is obtd. The reproducible adjustment of the residual stresses is possible.