发明名称 |
SEMICONDUCTOR DEVICE HAVING A COMPOSITE INSULATING INTERLAYER |
摘要 |
A semiconductor device has a first interconnection pattern (22) formed on a semiconductor substrate (21), and a second interconnection pattern (25) located in and over a through hole (A) formed at a composite insulating layer structure (23, 24). The composite insulating layer structure is constituted by a first inorganic insulating film (23) and an organic insulating film (24). At a peripheral region of the second interconnection pattern (25), the organic insulating film (24) is partially eliminated to form an eliminated portion (B). The semiconductor device also has a second inorganic insulating film (25) which is formed over the organic insulating film (24) and is directly formed on the first inorganic insulating film (23), via the eliminated portion (B). |
申请公布号 |
EP0318954(A3) |
申请公布日期 |
1989.07.26 |
申请号 |
EP19880119978 |
申请日期 |
1988.11.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MASE, YASUKAZU PATENT DIVISION, K.K. TOSHIBA;ABE, MASAHIRO PATENT DIVISION, K.K. TOSHIBA;YAMAMOTO, TOMIE PATENT DIVISION, K.K. TOSHIBA |
分类号 |
H01L21/312;H01L21/31;H01L21/314;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/52 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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