| 摘要 |
PURPOSE:To image a weaker infrared image over a wider wavelength band than that in a prior art by providing a rear radiation type in each sensor of a Schottky barrier infrared ray sensor array and providing an optical resonating mechanism having a laminated structure of a silicon substrate/Schottky electrode/dielectric film/metal mesh filter. CONSTITUTION:An optical resonating mechanism is composed of a P-type Si substrate 1/a Schottky electrode (PtSi)2/a dielectric film 8/a metal mesh filter 9, lambda/g of the filter 9 for an infrared ray having 4mum of wavelength becomes 2, exhibiting sufficiently high reflectivity. Accordingly, the absorptivity of the PtSi is improved by interference effect as compared with the case having no optical resonating mechanism. The lambda/g of the film 9 for the infrared ray near the intermediate of 2-3mum of wavelength which reduces the absorption of the infrared ray in the PtSi becomes approx. 1.2-1.3 when the reflectivity from the front side of the film 8 is high, and it has only the low reflectivity. Accordingly, the absorptivity of the PtSi is obtained in the degree to correspond to that having no optical resonating mechanism. |
