| 摘要 |
PURPOSE:To facilitate formation of a resistance element region and a wiring region at arbitrary positions with required resistance values by a method wherein a polycrystalline silicon resistant film and a conduction film are provided with an insulating film in between and patterned into the same pattern and both the films are made to be continuous electrically at required positions. CONSTITUTION:Both a load resistor pattern 11 and a wiring pattern 12 have double-layer structures composed of polycrystalline silicon high resistance films 7 and high melting point metal silicide layers 10 unified with CVD silicon oxide film 8 in between. Therefore, in the part such as the film 7 of the pattern 11 which has no interconnection with the upper layer 10 and where the layer 10 is electrically floating, the film 7 only functions to form a high resistance element part. In the part such as the pattern 12 where the upper layer 10 and the lower layer 7 are connected to each other, as the layer 10 contributes to electric conduction, a very low resistance wiring part is formed. Therefore, the high resistance element region and the wiring region can be formed so as to have respective required resistance values freely by the patterning of the respective regions and setting contact holes 6 and 9 selectively. |
