| 摘要 |
The device comprises a zincblende type compound semiconductor substrate having a surface of a (111) plane. The substrate is prf. a III-V compound espercially GaAs, InP, InSb, Gap, AlSb, BN, BP, AlAs, InGaAsP, AlGaAsP, InGaAsSb, AlGaAsSb, AlGaInP, AlGaAsSb, or a II-IV compound. The FET is one or more of a MESFET, JFET, MISFET and a two-dimensional carrier gas channel FED.
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