| 摘要 |
<p>PURPOSE: To provide a method for program MOS and CMOS ROM by switching all cells to be bonded in a preset logical state to permanent nonconducting or off state. CONSTITUTION: A boundary of the activation region of a P type substrate is defined by growing a field oxide region 2. That region is subjected to gate oxidation to produce a polysilicon layer and then masked to define a gate region. A substrate 1, the region 2, the gate oxide 3 and the gate region 4 are stored. Subsequently, the gate oxide is etched and the part covering the active region is removed up to the side of the region 4. Furthermore, a permanently nonconducting memory cell is covered partially by masking. A resist region 5 is superposed, at least partially, on the gate region of a cell to be programmed and the source or drain region and arsnic ions 6 are collected in the source region of a cell in a memory array and in the thin layers 7, 8 of the drain region thus programming a memory.</p> |
