| 摘要 |
PURPOSE:To improve adhesion and insulation properties between a polyimide film and a metal conductive film by performing an inverse sputtering of the polyimide film, forming the conductive film in a specified pattern, and then performing an O2 plasma ashing treatment to the polyimide film exposed to the surface. CONSTITUTION:A first wiring pattern 2 is formed on a substrate 1, a polyimide film 3 is adhered to the entire surface of it, and then window opening of a location which is connected to a second wiring pattern is performed. After this, the substrate 1 is set to a sputter device and an inverse sputtering by Ar ion is performed on the surface of the film 3 for several minutes at several hundreds W-1KW for cleaning the surface of the film 3 and roughening the it. After this, a conductive film 4A consisting of Cu/Cr is adhered by the same sputter device and patterning is performed for forming a second wiring pattern 4. Then, the entire surface of the film 3 is subject to plasma ashing treatment and a surface 3' of the roughened surface 3 is ashed and eliminated. |
