| 摘要 |
PURPOSE:To improve electrical reliability, and to increase the number of terminals by forming a through-hole wiring electrically separated from a silicon substrate into a through-hole penetrating from an element loading surface to a device mounting surface with a substantially uniform opening diametral size in the silicon substrate. CONSTITUTION:A plurality of through-hole wirings 23 are shaped to the single crystal silicon substrate 20 of a mother chip 2. The through-hole wirings 23 are buried into through-holes 21 formed to the single crystal silicon substrate 20 while interposing insulating films 22. Silicon oxide films shaped onto the surface of the single crystal silicon substrate 20 through thermal oxidation treatment are used as the insulating films 22, and the insulating films 22 are formed for electrically isolating the single crystal silicon substrate 20 and the through-hole wirings 23. The through-holes 21 can be formed through etching from one of the element loading surface (or a device mounting surface) of the single crystal silicon substrate 20 to prevent misalignment as well as the defective continuity of the through-holes 21, thus improving the electrical reliability of a semiconductor device 1. |
