| 摘要 |
PURPOSE: To enhance the efficiency of a device and light output by a method wherein a bias potential lower than a potential requisite to carrier multiplication due to electron avalanche breakdown is fed between electrodes to excite light emission by an individual carrier introduction at an energy lower than the energy which is needed in the case where the bias potential is not applied. CONSTITUTION: Electrons (majority carriers in an N-type material) are moved in the direction to become more distant from an earthen electrode 13 within a conduction band to turn toward a positive electrode 12 and holes (minority carriers) are moved in the direction to become more distant from the positive electrode 12 along a valence band to turn toward the electrode 13. Electron-hole pairs are generated when an electron beam, which is shown by the arrow, is incided in the one-sided surface of a device and when these electron-hole pairs are recombined, energy begins to generate in the form of light emission and as a potential is augmented, a multitude of electron- hole pairs are more generated. In the case where the potential is held at a level lower than a level requisite to a carrier multiplication due to an electron avalanche breakdown, the electron beam, which is incided in the device, generates an electron avalanche state. Thereby, both of the efficiency of the device and light output are increased. |
