| 摘要 |
PURPOSE:To form an insulating film without changing a composition on the surface of a CdTe substrate when the insulating film is formed by a method wherein, before the insulating film is formed, a prescribed electrode is formed on the CdTe substrate by an electroless plating operation. CONSTITUTION:A processed and denatured layer is removed, by a chemical treatment, from faced faces of a p-type CdTe substrate 1; after that, Pt electrodes 2 are formed by an electroless plating operation. Then, an SiON film 3 as an insulating film is formed on one face, where the Pt electrode 2 has been formed, by a plasma CVD method by utilizing a microwave electron cyclotron resonance absorption; a mixed gas of SiH4 and N2O or of SiH4, N2O and N2 is used as a raw-material gas. Then, a pattern mask is formed; after that, a plasma dry etching operation by CF4 is executed; a prescribed pattern window 6 is formed in one part of the SiON film 3; the Pt electrode 2 is exposed only at the pattern window part 6. During this process, a size of the pattern window 6 is set to smaller than the Pt electrode 2. Then, an Al layer 4a is formed additionally on the SiON film 3 by an evaporation operation. Lastly, a mask pattern is formed; after that, an Al film 4b of a prescribed pattern is formed.
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