| 摘要 |
A static semiconductor memory device having an improved write circuit which can perform a write operation at a high speed is disclosed. The memory device comprises a plurality of memory cells each having a flip-flop holding a first level and a second level lower than the first level and a write circuit for operatively generating a write data signal which is applied to a selected one of the memory cells, the write data signal selectively assuming a low level of write data signal which is lower than the second level.
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