| 摘要 |
PURPOSE:To improve the superconductivity of the produced thin film by vapor- depositing a rare-earth metal, Ce and Cu from separate vaporization sources on the surface of a substrate with an oxygen atmosphere having a relatively high pressure formed in the vicinity of the substrate to be vapor-deposited. CONSTITUTION:A vacuum vapor-deposition vessel in which a substrate to be vapor-deposited is set is evacuated to a high vacuum of about 10<-6>Torr, then a trace of gaseous O2 is continuously injected toward the substrate from the vicinity of the substrate, and the pressure of only the gaseous O2 close to the substrate surface is increased to 10<-2>-10<-1>Torr. Meanwhile, the gas in the vessel is continuously exhausted to control the gaseous O2 pressure at the greater part in the vessel except the vicinity of the substrate to 10<-5>-10<-3>Torr. Ln (rare- earth element selected from Pr, Nd and Sm), Ce and Cu are vaporized from the respective sources in the atomic ratio of (2-x):x:1 (0.14<=x<=0.18), a power of 50-500W is impressed between the substrate and sources to activate the vaporized metals, and an Ln2-xCexCuO4-y single crystal thin film consisting solely of a single crystal with the (001) face of the crystal paralleled with the film plane is grown on the substrate. |
