Process for passivating crystal defects in a polycrystalline silicon material.

摘要

A process for passivating crystal defects in polycrystalline or amorphous silicon material by thermal treatment in a hydrogen- containing atmosphere is intended to make it readily possible to achieve beneficial diode properties and/or beneficial passivation properties in amorphous or polycrystalline silicon material. Hydrogen/oxygen compounds are reduced at the surface of the silicon material, producing atomic hydrogen which diffuses into the silicon material.