发明名称 Conductivity modulation type MOSFET
摘要 A conductivity modulation MOSFET having a second buffer layer is disclosed. The second buffer layer is thinner and has a higher impurity concentration than the first buffer layer. The second buffer layer is interspersed with heavy metal atoms such as gold and platinum that facilitate recombination of holes and electrons thereby shortening turn off time. However, because of the relative thinness of the second layer compared to the first layer, the second layer has almost no influence in increasing ON resistance.
申请公布号 US5025293(A) 申请公布日期 1991.06.18
申请号 US19900467848 申请日期 1990.01.22
申请人 FUJI ELECTRIC CO., LTD. 发明人 SEKI, YASUKAZU
分类号 H01L29/68;H01L21/336;H01L29/167;H01L29/36;H01L29/739;H01L29/78 主分类号 H01L29/68
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