METHOD OF MANUFACTURING DRAM CELL HAVING SPACE WALL OXIDE

摘要

forming a first trench (36) at the predetermined portion of a substrate; forming a space wall oxide layer (23) on the side wall of the trench (36); forming a second trench (38) etched deeper in the first trench (36); forming a diffusion layer (26) on the side and bottom of the trench (38); forming electrodes on the inside of the first and second trenches; forming a device separating oxide film including a part of the electrodes; removing the space wall oxide formed on the opposite side of the device separating oxide film to form a bridge poly (31); forming a gate poly (35) on the substre; and formign soruce and drain regions on the gate poly. The bridge poly for connecting between a transistor and a capacitor is easily formed.