| 摘要 |
<p>PURPOSE:To improve yield by anealing a substrate after depositing a base material on the substrate, and controlling an aneal temperature or time. CONSTITUTION:An indium tin oxide film (ITO) is deposited on the whole surface of a transparent substrate 51 by magnetron sputtering or deposition and next patterned to a prescribed shape by photoetching. A wiring electrode 54 is one of matrix electrodes, moved to the same chamber or the other chamber after depositing a non-linear resistance thin film on AlSi or Cr metal which is continuously deposited by the magnetron sputtering method. In such a case, the substrate 51, which electric characteristic of a non-linear resistance element is out of a standard, is anealed and by controlling the aneal temperature or time, the electric characteristic of the non-linear resistance element is controlled so as to be in the standard. Thus, the rate of defect caused by the electric characteristic is reduced and the yield is improved.</p> |
