Method of forming semiconductor thin film.

摘要

A method of forming a semiconductor thin film based on crystallizing a thin film crystal from an amorphous thin film by solid phase growth. A plurality of small regions which are preferentially made nuclei generation points are formed at predetermined positions in the amorphous thin film. Solid phase growth from single nuclei formed in the small regions is preferentially effected by heating to form a crystalline semiconductor thin film in which the grain boundary positions are adjusted to the desired positions. This crystalline semiconductor thin film is subjected to a heat treatment to reduce defects in crystal grains.