| 摘要 |
PURPOSE:To enable a voltage to approach to the breakdown voltage when an electrode wiring does not intersect at a field plate by a method wherein the field plate is arranged between an element isolating region and the electrode wiring to impress the plate with specific voltage so that the electric field concentration in a substrate main surface may be relieved. CONSTITUTION:Within a substrate provided with an element isolating region 5, an electrode wiring 10, a field plate 12 etc., the region 5 is normally impressed with the lowest potential i.e., the grounding potential while an n<+>type semiconductor region 21 is impressed with a high potential VB through the intermediary of the electrode wiring 10. Besides, the plate 12 is impressed with another potential VG. At this time, when this potential VG is boosted from zero potential, the breakdown voltage VB of a diode is boosted taking a linear shape. That is, if the potential impressed on the plate 12 is positive potential to said region 5, the voltage impressed on an insulating layer 6 is to be lowered. Accordingly, the electric field is weakened on the layer 6 surface. Furthermore, if the electric field is specified, the thickness of the insulating layer 6 beneath the plate 12 is equivalently impressed. Finally, the electric field is relieved on the substrate main surface near the sides of the plate 12 to increase the breakdown voltage. |
