| 摘要 |
PURPOSE:To uniformly maintain the size, shape and the like of a matching mark independent of the conditions of selective growth by a method wherein a selective growth film is not formed on the reference mark part which is deformed in the ordinary process of selective growth. CONSTITUTION:A lithography process, in which a pattern covering a reference mark forming region, is added of the anisotropic etching for formation of an insulating film 7 on the side face of a gate electrode 5 to be conducted before selective epitaxial growth is conducted on a source and drain region. Consequently, as a gate side insulating film 7 is left on the region which is not covered by a thick insulating film for element isolation of the reference mark forming region, epitaxial film is not grown on the reference mark even when a selective epitaxial process is conducted thereafter. |
