MANUFACTURE OF X-RAY MASK

摘要

PURPOSE:To form a film of an X-ray absorber having a dense structure and small internal stresses by setting atmospheric O2 pressure parting in a specified range in the case of rf magnetron sputtering. CONSTITUTION:When an X-ray absorber (W) film is formed by an rf sputtering device, W is set as a target 11, and high-frequency voltage is applied taking in Ar and O2 into a chamber 1. And plasma is produced between both electrodes 9, 10 by the application of this high-frequency voltage, W sputtered from the target 11 adheres on a board 12 with O2 in the atmosphere, and a WOX film is formed on the surface of the board 12. On this occasion, a WOX film whose crystal state is dense and whose density is not so low can be obtained by setting the O2 pressure parting in about 5-10%.