发明名称 PHOTOMASK BLANK AND PHOTOMASK
摘要 PURPOSE:To prevent the degradation in sectional shape at the time of overetching by incorporating a chromium carbide, chromium nitride and chromium oxide into an antireflection film and decreasing the degree of oxidation of the antireflection film from a light transparent substrate toward a light shieldable thin film in the thickness direction thereof. CONSTITUTION:The 1st antireflection film 2 consists of the chromium carbonitrooxides and the degree of the oxidation thereof decreases from the light transparent substrate 1 toward the light shieldable thin film 3 in the thickness direction thereof. The degree of the oxidation of the antireflection film 2 is changed in the film thickness direction, by which the side etching rate is suppressed and the prescribed sectional shape is obtd. The etching rate of the antireflection film 2 is matched with the etching rate of the light shieldable thin film 3 laminated thereon by carbonizing the chromium. The formation of the film to the overhang-like sectional shape is prevented in this way.
申请公布号 JPH049847(A) 申请公布日期 1992.01.14
申请号 JP19900110298 申请日期 1990.04.27
申请人 HOYA CORP 发明人 MITSUI MASARU;MAEDA YOSHIO;USHIDA MASAO
分类号 G03F1/46;G03F1/50;H01L21/027 主分类号 G03F1/46
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