| 摘要 |
An imaging device arrangement comprises infra-red radiation detector elements (10) and signal-processing circuitry including at least one charge-transfer line (30). The detector elements (10) are preferably cadmium mercury telluride photovoltaic diodes formed in a common body or body portion which is secured to a substrate (e.g. of silicon) comprising the charge-transfer line (30). Each detector element (10) is connected between an input connection (2, 3) of the charge-transfer line (30) and a common electrical connection (4). At least one storage electrode (62) and at least one subtraction gate (63) are present at each input connection (2, 3) for subtracting at least one portion (77) of the charge-signal so that only a portion (78) of the charge-signal for each detector element (10) is transferred along the charge-transfer line (30). The subtracted charge (77) is drained away via the radiation detector elements (10) by means of a pulse generator (50) or other voltage switching means which is connected to the common electrical connection (4) to switch the common voltage applied to the detector elements (10). A compact structure with fast draining at each input connection (2, 3) is obtained. The pulse generator (50) can be formed with other pulse generators of the at least one charge-transfer line (30) in a peripheral area of the circuit substrate. <IMAGE> |
