| 摘要 |
PURPOSE:To prevent the misregistration of patterns at the time of overlap exposing with an electron beam by successively coating a reticle substrate with a light shielding film and resist film and exposing the exposing parts of the resist film by the electron beam without decreasing a residual film rate to zero, then reexposing only the shifter part on the peripheral edge of the exposed part, thereby patterning the resist film. CONSTITUTION:The reticle substrate 1 is coated with a chromium film as the light shielding film 2 by a sputtering method and is coated with the resist film 3 for the electron beam by a spinner. The exposing part 4 of the resist film 3 is exposed by the electron beam 5 at the dosing quantity determined in such a manner that the residual film rate of the resist film 3 after the exposing and developing attains 50%. In succession, only the shifter part 7 on the peripheral edge of the exposing part 4 is again exposed at the same dosing quantity. The Cr film 2 of the shifter part 7 is etched away with the resist film 3 as a mask and in succession, the glass substrate 1 of the shifter part is etched. The resist film 3 is ashed away until the Cr film 2 on the exposing part 4 is exposed to remove the resist film 3 on the glass substrate 1. The misregistration of the patterns at the time of the overlap exposing by the electron beam is prevented in this way. |
