| 摘要 |
PURPOSE:To enhance relative positional precision among a light-transmitting pattern, a phase shifter and a positioning mark on a reticle by forming the main pattern and the phase shifter by different electron beam exposure methods and preventing electrostatic charging of the transparent substrate. CONSTITUTION:A light-shielding film 2 made of chromium or the like formed on the surface of an insulating transparent substrate 1 is selectively etched and removed together with the substrate 1 and a conductive film 10 selectively etchable and removable and a second resist layer 6 are formed directly on the etched substrate 1 freed of the film 2 and on the isolated film 2, and this layer 6 is exposed to the electron beams, resulting in erasing charge on the surface of the substrate 1 and the like. Charging of the resist layer 6 is not affected by regulating its thickness to <=1.0 mum, and if it is thicker, charging is prevented by covering the layer 6 with a conductive resin or like. The conductive film 10 is selectively removed after patterning by the resist layer 6, thus permitting the reticle high in precision to be manufactured in high resolution by the phase shift method. |
