| 摘要 |
PURPOSE:To eliminate the need for an intermediate layer with a lower layer resist for flattening steps and to decrease the number of processes of resist processing by using a silanol compd. and an acid precursor as essential components. CONSTITUTION:The lower layer resist 3 for flattening steps consisting of a novolak resin and the electron beam resist 4 are successively applied on a silicon oxide film 2 of the main surface of a semiconductor wafer 1 consisting of a silicon single crystal. The electron beam resist is formed by dissolving the silanol compd. and the acid precursor in an org. solvent. The acid precursor is compounded at a ratio of 1 to 50wt.% with 50 to 99wt.% silanol compd. The acid liberated from the acid precursor of the exposed part changes to a catalyst and generate the condensation reaction of the silanol compd. if this electron beam resist is irradiated with radiations. Alkaline-insoluble polysiloxane is then formed. Only the unexposed part is then dissolved and the prescribed resist patterns are obtd. if the alkaline developing soln. is acted thereon. |
