WIRING STRUCTURE OF SEMICONDUCTOR CHIP

摘要

In order to prevent a relatively wide aluminum wiring layer (12) such as a power source wiring or a ground wiring formed on a semiconductor substrate (11) from being corroded by the sliding and, in the case of a multilayer interconnection, to prevent the lower-layer wiring from being broken by the sliding of the upper-layer aluminum wiring (12) and to prevent the generation of voids in the lower-layer aluminum wiring layer caused by moisture under the wide metal wiring layer, the relatively wide wiring layer (12) is devided in such a manner that each wiring layer after being divided will have a width of greater than 10 mu m but smaller than 40 mu m.