| 摘要 |
The amorphous silicon thin film transistor having a signal electrode (2), an insulating film (3) and first source and drain electrodes (5,6) on a glass substrate (1) comprises a protection film (7) formed by depositing an amorphous silicon nitride film on the first electrodes (5,6) at the thickness of 3000-4000 angstroms, a light shield film (8) formed on the protection film and for shielding the light vertically incident on a channel, and second source and drain electrodes (5',6') of the same material as the shield film (8) for shielding the inclined incident light, thereby improving the charactristic of the thin film transistor.
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