发明名称 |
MANUFACTURE OF NONLINEAR OPTICAL MATERIAL |
摘要 |
PURPOSE:To disperse semiconductor particulates having excellent stoichiometric property into matrix in high concentration and uniformly by depositing semiconductor particulates in a porous body through a chemical gaseous phase growth method in which reaction is performed due to diffusion of material gas at nearly lower limit temperature of reaction of the material gas and under the reduced pressure condition. CONSTITUTION:A porous body 4 is placed in a reaction vessel 1, and semiconductor particulates are deposited in the porous body 4 by the use of chemical gaseous phase growth method. This reaction is performed through diffusion of material gas at nearly lower limit temperature of reaction of the material gas and under the reduced pressure condition. Consequently, excessive deposit in proximity to the surface of the porous body can be avoided, and the semiconductor particulates are uniformly deposited up to deep parts. Hereby, nonlinear optical material having good nonlinear optical specificity which the semiconductor particulates of excellent stoichiometric property are dispersed in high concentration and uniformly, can be obtained.
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申请公布号 |
JPH04188116(A) |
申请公布日期 |
1992.07.06 |
申请号 |
JP19900318722 |
申请日期 |
1990.11.22 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TSUJIMURA AYUMI;TANAHASHI ICHIRO;MITSUYU TSUNEO;NISHINO ATSUSHI |
分类号 |
G02F1/35;C01B39/06;C01B39/14;C01B39/22;C01B39/24;C03C21/00;G02F1/355;H01L21/365;H01S3/108 |
主分类号 |
G02F1/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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